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We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices that have a top gate and act as RC low-pass filter, we fabricate a new device to reduce the device's top gate area from 400 ^2 to 0.09 ^2. Having a smaller top gate eliminates the cutoff frequency problem preventing the RF signal from reaching QD. We showarXiv:2010.07566v3 fatcat:7oggwejeizclzjpbe3ekb47nxu