Second-Harmonic Generation in GaAs: Experiment versus Theoretical Predictions ofχxyz(2)

S. Bergfeld, W. Daum
2003 Physical Review Letters  
For GaAs we have determined j 2 xyz ÿ2!; !; !j in second-harmonic generation experiments using two-photon energies between 2 and 5 eV. In addition to the E 1 , E 1 1 , E 0 0 , and E 2 critical-point bulk transitions of GaAs, a surprisingly strong surface transition at 3.35 eV was observed for natively oxidized GaAs(001) samples. A detailed comparison with theoretical predictions reveals that calculations that include many-particle effects at the level of the "scissors" approximation can
more » ... imation can describe the overall frequency dependence of the second-harmonic susceptibility reasonably well.
doi:10.1103/physrevlett.90.036801 pmid:12570514 fatcat:57o2elo5xvepjc2vkv3y5btmka