Surface micromachined solenoid on-Si and on-glass inductors for RF applications

Jun-Bo Yoon, Bon-Kee Kim, Chul-Hi Han, Euisik Yoon, Choong-Ki Kim
1999 IEEE Electron Device Letters  
RF performance of surface micromachined solenoid on-chip inductors fabricated on a standard silicon substrate (10 1 cm) has been investigated and the results are compared with the same inductors on glass. The solenoid inductor on Si with a 15-m thick insulating layer achieves peak quality (Q0) factor of 16.7 at 2.4 GHz with inductance of 2.67 nH. This peak Q-factor is about two-thirds of that of the same inductor fabricated on glass. The highest performance has been obtained from the
more » ... tched on-glass inductor, which shows inductance of 2.3 nH, peak Q-factor of 25.1 at 8.4 GHz, and spatial inductance density of 30 nH/mm 2 . Both on-Si and on-glass inductors have been modeled by lumped circuits, and the geometrical dependence of the inductance and Q-factor have been investigated as well. Index Terms-High Q, integrated inductor, micromachining, on-chip solenoid inductor, RF MEMS.
doi:10.1109/55.784461 fatcat:gqwjq6ddwzgtld3txhdjmzrx7i