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Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
2012
2012 International Electron Devices Meeting
Preserved Fulltext
BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1] [2] [3] are shown to scale to the <30nm CDs and <12nm thicknesses found in advanced technology nodes. Switching speeds at the high (>100uA) currents of NVM writes can reach 15ns; NVM reads at typical (∼5uA) current levels can be 1usec.
doi:10.1109/iedm.2012.6478967
fatcat:f6zz6ici4bbsrduahbcymmhlji