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Epitaxial scandium nitride films ͑225 nm thick͒ were grown on silicon by molecular beam epitaxy, using ammonia as a reactive nitrogen source. The main crystallographic orientation of ScN with respect to Si is ͑111͒ ScN ʈ ͑111͒ Si and ͓1-10͔ ScN ʈ ͓0-11͔ Si ; however, some twinning is also present in the films. The films displayed a columnar morphology with rough surfaces, due to low adatom mobility during growth. The strain-free lattice parameter of ScN films grown under optimized conditionsdoi:10.1063/1.2217106 fatcat:xo6n5zabmrey3otslice3tjzxi