Àíîòàö³ÿ. Ïðîâåäåí³ åêñïåðèìåíòàëüí³ äîñë³äaeåííÿ òåìïåðàòóðíèõ çàëåaeíîñòåé ðåíò-ãåíîëþì³íåñöåíö³¿, ðåíòãåíî-³ òåìíîâî¿ ïðîâ³äíîñò³ âèñîêîîìíèõ íåëåãîâàíèõ êðèñòàë³â ZnSe. Âñòàíîâëåíî, ùî òåìíîâà ïðîâ³äí³ñòü çðàçê³â ïðè òåìïåðàòóðàõ Ò > 400 Ê îáóìîâëåíà òåðì³÷íîþ äåëîêàë³çàö³ºþ íîñ³¿â ç ãëèáîêèõ ëîêàëüíèõ ð³âí³â Å Ò = 0.83 åÂ, ³ âåëè÷èíà ðåíòãåíîïðîâ³äíîñò³ ïðè íàãð³âàíí³ äî 350 Ê ìîíîòîííî ñïàäàº, àëå ïðè âèùèõ òåìïåðàòóðàõ -íàâ³òü ïîñòóïîâî çðîñòàº. Çàâäÿêè âèÿâëåíèì îñîáëèâîñòÿì

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... ¿ ïîâåä³íêè ðåíòãåíîïðîâ³äíîñò³ êðèñòàë³â ZnSe, ¿õ ìîaeíà çàñòîñîâóâàòè ÿê äåòåêòîðè ðåíòãåí³âñüêîãî òà -âèïðîì³íþâàííÿ, ÿê³ íàä³éíî ïðàöþâàòèìóòü ïðè òåìïåðàòóðàõ íàâêîëèøíüîãî ñåðåäîâèùà  100 0 C ( âèñîêîòåìïåðàòóðí³ äåòåêòîðè). Êëþ÷îâ³ ñëîâà: ðåíòãåíîïðîâ³äí³ñòü, äåòåêòîðè -âèïðîì³íþâàííÿ, íàäë³í³éí³ ÂÀÕ Abstract. Experimental investigations of temperature dependences of X-ray luminescence, X-ray and dark conductivity of undoped crystals ZnSe has been investigated. It has been shown that the dark conductivity of samples with temperatures T > 400 K is conditioned by thermal delocalization of carriers from deep levels E T = 0.83 eV, and the magnitude of of X-ray conductivity decreases with heating until 350 K, but increases -with higher temperatures. Due to this behavior of X-ray conductivity of ZnSe crystals it can be possible to use them as X-or gamma ray detectors for hightemperature environment (high-temperature detectors).