8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs

V. Hurm, J. Rosenzweig, M. Ludwig, W. Benz, M. Berroth, A. Huelsmann, G. Kaufel, K. Koehler, B. Raynor, J. Schneide
1991 Electronics Letters  
An 8·2GHz bandwidth monolithic optoelectronic receiver consisting or an MSM photodiode, a transimpcdancc ampli· fier, and a 5()fl output buffer has been fabricated using an enhancement/depletion ()-5,u:m recessed-gate AIGaAs/GaAs H EMT process. Successful operation at data rates up to I 0 Gbit/s bas been demonstrated.
doi:10.1049/el:19910456 fatcat:33yue2uq7zaizljvj6647vmduu