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8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs
1991
Electronics Letters
Preserved Fulltext
An 8·2GHz bandwidth monolithic optoelectronic receiver consisting or an MSM photodiode, a transimpcdancc ampli· fier, and a 5()fl output buffer has been fabricated using an enhancement/depletion ()-5,u:m recessed-gate AIGaAs/GaAs H EMT process. Successful operation at data rates up to I 0 Gbit/s bas been demonstrated.
doi:10.1049/el:19910456
fatcat:33yue2uq7zaizljvj6647vmduu