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2013 IEEE International Electron Devices Meeting
The coupling effect between multi-traps in complex RTN is experimentally studied in scaled high-κ/metal-gate MOSFETs for the first time. By using extended STR method, the narrow "test window" of complex RTN is successfully expanded to full V G swing. Evident defect coupling can be observed in both RTN amplitude and time constants. Interesting nonmonotonic bias-dependence of defect coupling is found, which is due to two competitive mechanisms of Coulomb repulsion and channel percolationdoi:10.1109/iedm.2013.6724731 fatcat:wan7yuhuybeyhdvskagnfoxoye