New observations on complex RTN in scaled high-κ/metal-gate MOSFETs — The role of defect coupling under DC/AC condition

Pengpeng Ren, Peng Hao, Changze Liu, Runsheng Wang, Xiaobo Jiang, Yingxin Qiu, Ru Huang, Shaofeng Guo, Mulong Luo, Jibin Zou, Meng Li, Jianping Wang (+8 others)
2013 2013 IEEE International Electron Devices Meeting  
The coupling effect between multi-traps in complex RTN is experimentally studied in scaled high-κ/metal-gate MOSFETs for the first time. By using extended STR method, the narrow "test window" of complex RTN is successfully expanded to full V G swing. Evident defect coupling can be observed in both RTN amplitude and time constants. Interesting nonmonotonic bias-dependence of defect coupling is found, which is due to two competitive mechanisms of Coulomb repulsion and channel percolation
more » ... n. The decreased defect coupling is observed with increasing AC frequency. Based on the new observations on complex RTN, its impacts on the circuit stability are also evaluated, which show an underestimation of the transient performance if not considering defect coupling. The results are helpful for future robust circuit design against RTN. Projects (2011CBA00601), NSFC (61106085 and 60625403), and the National S&T Major Project (2009ZX02035-001).
doi:10.1109/iedm.2013.6724731 fatcat:wan7yuhuybeyhdvskagnfoxoye