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A simple method for controlling the tunnel resistance of nanogap electrodes, based on electromigration induced by field emission current, is presented. In this study, we investigated the controllability of the tunnel resistance of nanogap electrodes by only adjusting the applied current. Initial planar nanogaps of Ni, typically separated by 22 -44 nm, were fabricated on SiO 2 /Si substrates by electron-beam lithography and lift-off process. Then, a current was passed through the nanogaps atdoi:10.1143/jjap.46.l907 fatcat:z5klmq6n45f6bn3irdax7w67qe