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Control of Tunnel Resistance of Nanogaps by Field-Emission-Induced Electromigration

Sho Kayashima, Keisuke Takahashi, Motoaki Motoyama, Jun-ichi Shirakashi
2007 Japanese Journal of Applied Physics  

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A simple method for controlling the tunnel resistance of nanogap electrodes, based on electromigration induced by field emission current, is presented. In this study, we investigated the controllability of the tunnel resistance of nanogap electrodes by only adjusting the applied current. Initial planar nanogaps of Ni, typically separated by 22 -44 nm, were fabricated on SiO 2 /Si substrates by electron-beam lithography and lift-off process. Then, a current was passed through the nanogaps at
more » ... temperature. By increasing the current from about 1 nA to 30 mA, the resistance of the nanogaps decreased, ranging from 100 T to 10 M. This result implies that this technique can simplify the fabrication of planar-type tunnel junction devices.
doi:10.1143/jjap.46.l907 fatcat:z5klmq6n45f6bn3irdax7w67qe
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Sho Kayashima, Keisuke Takahashi, Motoaki Motoyama, Jun-ichi Shirakashi. "Control of Tunnel Resistance of Nanogaps by Field-Emission-Induced Electromigration." Japanese Journal of Applied Physics 46.No. 37 (2007) L907-L909