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Recently, a comprehensive model has been developed by Luo and Dornfeld ("Material removal mechanism in chemical mechanical polishing: theory and modeling," IEEE Trans. Semiconduct. Manufact., vol. 14, pp. 112-133, May 2001) to explain the material removal mechanism in chemical mechanical planarization (CMP). Based on the model, the abrasive size distribution influences the material removal from two aspects, one, the number of active abrasives, and the other, the size of the active abrasives. Indoi:10.1109/tsm.2003.815199 fatcat:jcgmgipzb5d5doeqegiicxqx2y