In Situ Growth Rate Measurement of Selective LPCVD of Tungsten

J. Holleman
1991 Journal of the Electrochemical Society  
The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven to be a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurement of the deposition rate: The influence of surface roughening due to either the W growth or an etching pretreatment of the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.
doi:10.1149/1.2085758 fatcat:ka3jny6wyvbanecb5ios7cbonm