One method being used to determine energy levels(s) and electrical activity of impurities in silicon is described. The method is called Capacitance Transient Spectroscopy (CTS). It cart be classified into three basic categories: the thermally stimulated capacitance method (TSCAP), the voltage-stimulated capacitance method (VSCAP) $ and the light-stimulated capacitance method (LSCAP); the first two categories are discussed. From the total change in capacitance and the time constant of the

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... ance response emission rates, energy levels, and trap concentrations can be determined. A major advantage of using CTS is its ability to detect the presence of electrically active impurities that are invisible to other techniquesp such as Zeeman effect atomic absorptions and the ability to detect more than one electrically active impurity in a sample. Examples of detection of majority and minority carrier traps from gold donor and acceptor centers in silicon ► using the capacitance transient spectrometer are given to illustraT,e the method and its sensitivity. Experimental examples are given to illustrate the trap parameters that can be determined from capacitance transients, and the experimental test procedure and equipment used are described.