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GaAs-based single electron transistors (SETs) and their logic inverters were successfully designed and fabricated using a Schottky wrap-gate (WPG) quantum wire and dot formation technology. Three-gate WPG SETs, which have two tunnel barrier gates and center gate for a quantum dot-potential control, showed voltage gains larger than unity due to tight dot-potential control of the center WPG. The conductance peak position of the SET could be systematically controlled by changing thedoi:10.1143/jjap.40.2029 fatcat:q5enoe4pyffsrdsf2zymbytv54