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Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
2016
Acta Physica Polonica. A
Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/ Ga0.80In0.20As0.15Sb0.85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 µm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3 ± 0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while
doi:10.12693/aphyspola.130.1224
fatcat:vmaalla3i5f33ivicfie4dk7me