Evaluation of Interface Trap Density in a SiGe/Si Heterostructure Using a Charge Pumping Technique and Correlation Between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs

T. Tsuchiya, Y. Imada, J. Murota
2002 32nd European Solid-State Device Research Conference  
Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the
more » ... ity in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.
doi:10.1109/essderc.2002.194914 fatcat:mocrvwguabggtfyueaok5b7wny