21pXA-9 SiO_2/Si(100) 界面近傍における余剰 Si 点欠陥の安定性
Stability of excess Si defects near SiO_2/Si(100) interfaces

H. Kageshima, T. Akiyama, K. Akagi, M. Uematsu, K. Shiraishi, S. Tsuneyuki
2003 Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu)  
doi:10.11316/jpsgaiyo.58.2.4.0_857_1 fatcat:dp622lfq5jaidiqwxrg2vnnqkq