PBTI/NBTI-Related Variability in TB-SOI and DG MOSFETs

B Cheng, A R Brown, S Roy, A Asenov
2010 IEEE Electron Device Letters  
We study positive bias temperature instability/ negative bias temperature instability (PBTI/NBTI)-related agingdependent statistical variability (SV) in 32-nm thin-body silicon-on-insulator (TB-SOI) and 22-nm double-gate (DG) MOSFETs using comprehensive 3-D numerical simulation. Results indicate that a high degree of PBTI/NBTI degradation can introduce a similar level of SV as the variability in the initial "virgin" devices introduced by random discrete dopants and line edge roughness.
more » ... roughness. Simulations have shown that the TB-SOI and the DG MOSFETs have different susceptibilities to PBTI/NBTI-induced variability. Index Terms-Double gate (DG), MOSFETs, positive bias temperature instability/negative bias temperature instability (PBTI/NBTI), SOI, statistical variability (SV).
doi:10.1109/led.2010.2043812 fatcat:7a5346gywzcz7cfpsd5ervchwe