Analysis of S-rich CuIn(S,Se)2 layers for photovoltaic applications: Influence of the sulfurization temperature on the crystalline properties of electrodeposited and sulfurized CuInSe2 precursors

V. Izquierdo-Roca, A. Pérez-Rodríguez, J. R. Morante, J. Álvarez-García, L. Calvo-Barrio, V. Bermudez, P. P. Grand, L. Parissi, C. Broussillon, O. Kerrec
2008 Journal of Applied Physics  
This paper reports the microstructural analysis of S-rich CuIn͑S,Se͒ 2 layers produced by electrodeposition of CuInSe 2 precursors and annealing under sulfurizing conditions as a function of the temperature of sulfurization. The characterization of the layers by Raman scattering, scanning electron microscopy, Auger electron spectroscopy, and XRD techniques has allowed observation of the strong dependence of the crystalline quality of these layers on the sulfurization temperature: Higher
more » ... ure: Higher sulfurization temperatures lead to films with improved crystallinity, larger average grain size, and lower density of structural defects. However, it also favors the formation of a thicker MoS 2 interphase layer between the CuInS 2 absorber layer and the Mo back contact. Decreasing the temperature of sulfurization leads to a significant decrease in the thickness of this intermediate layer and is also accompanied by significant changes in the composition of the interface region between the absorber and the MoS 2 layer, which becomes Cu rich. The characterization of devices fabricated with these absorbers corroborates the significant impact of all these features on device parameters as the open circuit voltage and fill factor that determine the efficiency of the solar cells.
doi:10.1063/1.2939833 fatcat:3xrshygn5zf6hdjvifsgemteqq