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High power K-band GaN on SiC CPW monolithic power amplifier
2014
2014 44th European Microwave Conference
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This paper presents a high power amplifier at Kband (20.2 -21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 µm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space.
doi:10.1109/eumc.2014.6986731
fatcat:5om7p44zojdnxlo33br4stnz3y