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Runtime mechanisms for leakage current reduction in CMOS VLSI circuits
2002
Proceedings of the International Symposium on Low Power Electronics and Design
This paper describes two runtime mechanisms for reducing the leakage current of a CMOS circuit. In both cases, it is assumed that the system or environment produces a "sleep" signal that can be used to indicate that the circuit is in a standby mode. In the first method, the "sleep" signal is used to shift in a new set of external inputs and pre-selected internal signals into the circuit with the goal of setting the logic values of all of the internal signals so as to minimize the total leakage
doi:10.1109/lpe.2002.146739
fatcat:k6dtf6ezj5cgfmzy377u4m6cse