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Reliable Power Gating With NBTI Aging Benefits
IEEE Transactions on Very Large Scale Integration (vlsi) Systems
In this paper, we show that Negative Bias Temperature Instability (NBTI) aging of sleep transistors (STs), together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for power gated circuits. Indeed, it reduces static power due to leakage current, and increases ST switch efficiency, making power gating more efficient and effective over time. The magnitude of these aging benefits depends on operating and environmental conditions. By means of HSPICEdoi:10.1109/tvlsi.2016.2519385 fatcat:wfgtoikm35c3zmckbpuoxuc5fy