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Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
MRS Internet Journal of Nitride Semiconductor Research
We investigated the properties of ion-implanted GaN:Zn annealed under various conditions using photoluminescence (PL) and high resolution x-ray diffraction (HRXRD). Epitaxial GaN/sapphire of high optical quality was ion-implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV. The sample was capped with 200 Å of SiNx and then diced into numerous pieces which were annealed under varied conditions in an attempt to optically activate the Zn. Annealing was performed in a tube furnace under flowingdoi:10.1557/s1092578300001307 fatcat:a2agx7otg5g7djhdcjqa6jk3eq