Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon

Mara Bruzzi, David Menichelli, Monica Scaringella, Jaakko Härkönen, Esa Tuovinen, Zheng Li
2006 Journal of Applied Physics  
A quantitative study about the thermal activation of oxygen related thermal donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal donor formation has been performed through isothermal annealing at 430°C up to a total time of 120 min. Space charge density after each annealing step has been measured by transient current technique. The localized energy levels related to thermal double donors ͑TD͒ have been observed and studied in details by thermally
more » ... thermally stimulated currents ͑TSCs͒ in the range of 10-70 K, and activation energies E and effective cross sections have been determined for both the emissions TD 0/+ ͑E = 75± 5 meV, =4ϫ 10 −14 cm 2 ͒ and TD +/+ ͑E = 170± 5 meV, =2ϫ 10 −12 cm 2 ͒. The evolution of the space charge density caused by annealing has been unambiguously related to the activation of TDs by means of current deep level transient spectroscopy TSC, and current transients at constant temperature i͑t , T͒. Our results show that TDs compensate the initial boron doping, eventually provoking the sign inversion of the space charge density. TD's generation rate has been found to be linear with the annealing time and to depend critically on the initial interstitial oxygen concentration, in agreement with previous models developed on low resistivity silicon.
doi:10.1063/1.2192307 fatcat:5xz3gmhotrfhfcl5lo4hzqtzvu