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Wc have observed a new, strong, low-frcqucncy peak (at 47 cm ') in the Raman spectrum of ion-implanted GaAs having a mixed amorphous-microcrystalline microstructure. It is strongly resonant near 1.7 eV, just above the band gap, in contrast to the longitudinal-optic phonon line of the microcrystals (which rcsonatcs diff'crcntly) and the bands of the amorphous component (which do not resonate). We tentatively interpret this peak in terms of acoustic phonons made Raman active by the presence ofdoi:10.1103/physrevb.37.2737 pmid:9944840 fatcat:tn5gaycltffutimk6e7bznrff4