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It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a B s O 2i recombination center created by the optically excited migration of the oxygen dimer ͑charge-state-driven motion͒. In this letter the concentration dependence of the neutral state of O 2i on ͓O i ͔ in p-and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged statedoi:10.1063/1.3584138 fatcat:dgigqugui5fdfm7gs4jyse7hxm