The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?

L. I. Murin, E. A. Tolkacheva, V. P. Markevich, A. R. Peaker, B. Hamilton, E. Monakhov, B. G. Svensson, J. L. Lindström, P. Santos, J. Coutinho, A. Carvalho
2011 Applied Physics Letters  
It is widely believed that the light induced degradation of crystalline silicon solar cells is due to the formation of a B s O 2i recombination center created by the optically excited migration of the oxygen dimer ͑charge-state-driven motion͒. In this letter the concentration dependence of the neutral state of O 2i on ͓O i ͔ in p-and n-type Cz-Si has been determined using infrared absorption. A systematic search for the absorption signature of the dimer in the doubly positively charged state
more » ... been unsuccessful. These data strongly suggest that charge-state-driven motion ͑Bourgoin-Corbett mechanism͒ of the oxygen dimer cannot occur in typical solar silicon and hence bring into question the accepted degradation mechanism.
doi:10.1063/1.3584138 fatcat:dgigqugui5fdfm7gs4jyse7hxm