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ALD of High-κ Dielectrics on Suspended Functionalized SWNTs
2005
Electrochemical and solid-state letters
Conformal atomic layer deposition ͑ALD͒ on as-grown suspended single-walled carbon nanotubes ͑SWNTs͒ is not possible due to the inertness of ALD precursor molecules to the SWNT surface. Here, we present a functionalization technique that makes SWNTs reactive with ALD precursors, and deposit high-oxides ͑Al 2 O 3 and HfO 2 ͒ onto the nanotubes to illustrate this method. Reactivity of the precursors with the functionalized nanotubes is due to -NO 2 functional groups attached to the nanotube
doi:10.1149/1.1862474
fatcat:6gaen74cere4jgqdakehhoaiba