Highly doped thin-channel GaN-metal–semiconductor field-effect transistors

R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, G. Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala
2001 Applied Physics Letters  
We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal-semiconductor field-effect transistors ͑MESFETs͒ grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5ϫ10 18 cm Ϫ3 were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and maximum oscillation frequencies, and reduced low frequency and microwave noise. The obtained
more » ... The obtained results demonstrate that the dc and microwave performance characteristics of short-channel GaN MESFETs may be comparable to those for conventional AlGaN/GaN heterostructure FETs.
doi:10.1063/1.1344577 fatcat:nwhsi6j3c5hnrk6zhcwl7fc7jq