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We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal-semiconductor field-effect transistors ͑MESFETs͒ grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5ϫ10 18 cm Ϫ3 were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and maximum oscillation frequencies, and reduced low frequency and microwave noise. The obtaineddoi:10.1063/1.1344577 fatcat:nwhsi6j3c5hnrk6zhcwl7fc7jq