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Advanced CMOS substrates composed of ultra-thin strained-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI. Our pioneering method employed wafer bonding of SiGe virtual substrates (with strained-Si layers) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grindetchback or delamination via implantation. Both methods were found to produce a rough transferred layer, but polishing isdoi:10.1557/proc-745-n4.7 fatcat:ecfed4de45ac3kwok5fww5cul4