Thermodynamic Properties of Semiconductors with Defects

Vu Van Hung, Le Dai Thanh
2011 Materials Sciences and Applications  
Thermodynamic properties of diamond cubic and zinc-blende semiconductors with point defects are considered by the statistical moment method (SMM). The thermal expansion coefficient, the specific heats at constant volume and those at constant pressure, C V and C P , and the isothermal compressibility are derived analytically for semiconductors with defects. The SMM calculated thermodynamic quantities of the Si, and GaAs semiconductors with defects are in good agreement with the experimental results.
more » ... e experimental results.
doi:10.4236/msa.2011.29166 fatcat:nirl2qwtpvfpfakhhao2foxjju