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Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles
2019
European Physical Journal : Applied physics
Hydrogenated amorphous substoichiometric silicon carbon alloys (a-SiC:H) with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi-transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy-dispersive X-ray spectroscopy analyses. Current-voltage (I–V)
doi:10.1051/epjap/2020190253
fatcat:3q3ve4jbxrfebjume45syqdwi4