Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts

Bin Dong, Jie Lin, Ning Wang, Lingli Jiang, Zongdai Liu, Kai Cheng, Hongyu Yu
2016 Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)   unpublished
By measuring transfer characterises before and after a given number of specific pulse cycles applied on the gate electrode for AlGaN/GaN MIS-HEMTs, the threshold voltage (Vth) instability is investigated. Furthermore, by measuring the change in transient gate capacitance (ΔC) under different pulses, the effect of applied gate pulse on interface traps in AlGaN/GaN MIS-HEMTs is studied. These gate pulse induced states are believed to be responsible for the Vth instability in AlGaN/GaN MIS-HEMTs.
doi:10.2991/aest-16.2016.42 fatcat:ackfp4e5gnbufgdk3apsy2ttba