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Hot-electron model in doped silicon thermistors
High performance silicon hot electron bolometers AIP Conf. Abstract. We have characterized the I// noise in standard ion-implanted silicon thermistors, which are about 250 nm thick. We find that it is associated with the bulk of the implant, and is interpretable as a AR/R fluctuation that is independent of the bias and depends only on the doping density and resistivity, or electron temperature. This excess noise is large enough that it has a significant effect on the energy resolution or NEP ofdoi:10.1063/1.1457602 fatcat:ykiznnyjknhlfey2rxs5g3whja