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碳基CMOS集成电路技术:发展现状与未来挑战
2021
Scientia Sinica Chimica
Carbon nanotube, with its unique electrical performance, quasi-one-dimensional size and stable structure, holds great promise to be the most ideal semiconductor material in post Moore era. Significant process has been made in carbon based electronics. High semiconductor purity (better than 99.9999%) and high density (100-200 CNTs/ μm ) arrays of CNTs can be obtained on 4-inch wafer. The gate length of CNFET can be scaled down to 5 nm with superior performance than Si-FET. And the world's first
doi:10.1360/ssc-2021-0075
fatcat:jdunwwewvngo3j5eubuc3i46tq