SOI thermal impedance extraction methodology and its significance for circuit simulation

Wei Jin, Weidong Liu, S.K.H. Fung, P.C.H. Chan, Chenming Hu
2001 IEEE Transactions on Electron Devices  
The buried-oxide in SOI MOSFET inhibits heat dissipation in the Si film and leads to increase in transistor temperature. This paper reports a simple and accurate characterization method for the self-heating effect (SHE) in SOI MOSFET. The ac output conductance at a chosen bias point is measured at several frequencies to determine the thermal resistance ( ) and thermal capacitance ( ) associated with the SOI device. This methodology is important to remove the misleadingly large self-heating
more » ... t from the dc -data in device modeling. Not correcting for SHE may lead to significant error in circuit simulation. After SHE is accounted for, the frequency-dependent SHE may be disabled in circuit simulation without sacrificing the accuracy, thus providing faster circuit simulation for high-frequency circuits. Index Terms-Self-heating effect (SHE), SOI MOSFET, thermal impedance.
doi:10.1109/16.915707 fatcat:bkf7wyn6tng2bgee3xhpdimu7m