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THE INFLUENCE OF DEVICE GEOMETRY ON THE PARTIALLY DEPLETED SOI TRANSISTOR TID HARDNESS
English
2016
RAD Association Journal
English
The research is focused on the differences in radiation behavior for transistors of different geometry, body tie contact types, device layer thickness and biasing.
doi:10.21175/radj.2016.01.04
fatcat:afdhbabm2rd43elq5z76an5nxa