THE INFLUENCE OF DEVICE GEOMETRY ON THE PARTIALLY DEPLETED SOI TRANSISTOR TID HARDNESS
English

Ivan Shvetsov-Shilovskiy, Anatoly Smolin, Pavel Nekrasov, Anastasia Ulanova, Alexander Nikiforov
2016 RAD Association Journal  
The research is focused on the differences in radiation behavior for transistors of different geometry, body tie contact types, device layer thickness and biasing.
doi:10.21175/radj.2016.01.04 fatcat:afdhbabm2rd43elq5z76an5nxa