In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce an approach of modification of energy band diagram by additional doping of

more »

... channel of the transistors. We also consider an analytical approach to model and optimize technological process. KEYWORDS Modification of profile of dopant; decreasing of dimension of field-effect transistor; modification of energy band diagram