Inductively Coupled Plasma Discharge Simulation for the Semiconductor Process Considering Impedance Calculation in 3D Asymmetric Structure

Yejin Shon, Sora Lee, Dong-gil Kim, Deuk-Chul Kwon, HeeHwan Choe
2020 Applied Science and Convergence Technology  
This research investigates the plasma characteristics of an inductively coupled plasma discharge which is widely used in semiconductor fabrication processes. Three-dimensional non-symmetric geometry, which contains four discontinuous gas inlet ports and a unique antenna shape with individual power input and grounded output part, is assumed. Fluid-based simulation is performed to reduce the amount of computation that increases with the three-dimensional structure. Ar is used as a reaction gas to
more » ... s a reaction gas to simplify the physics. For comparison to increase accuracy in calculating the power induced to the plasma chamber, the capacitive electric field is calculated besides the usual inductive electric field; the impedance of the system is calculated from a field definition based on Poynting's theorem.
doi:10.5757/asct.2020.29.2.023 fatcat:oknya4ujfbdftep4ap3kfdu6c4