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Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration
Journal of Applied Physics
The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of t c =5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 • C, thinnerdoi:10.1063/1.5009641 fatcat:a2tom532d5blrevhrdpppuijwa