Etch-free low loss silicon waveguides using hydrogen silsesquioxane oxidation masks

Maziar P. Nezhad, Olesya Bondarenko, Mercedeh Khajavikhan, Aleksandar Simic, Yeshaiahu Fainman
2011 Optics Express  
An etch-free fabrication technique for creating low loss silicon waveguides in the silicon-on-insulator material system is proposed and demonstrated. The approach consists of local oxidation of a silicon-oninsulator chip covered with a e-beam patterned hydrogen silsesquioxane mask. A single oxidation step converts hydrogen silsesquioxane to a glasslike compound and simultaneously defines the waveguides, bypassing the need for any wet or dry etching steps. The spectral response of ring
more » ... fabricated using this technique was used to characterize the waveguide losses. Intrinsic Q-factors as high as 1.57 × 10 6 , corresponding to a waveguide loss of 0.35dB/cm, were measured.
doi:10.1364/oe.19.018827 pmid:21996825 fatcat:wkcfzdvvmnc5fff32jmkrixi4i