A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is
An etch-free fabrication technique for creating low loss silicon waveguides in the silicon-on-insulator material system is proposed and demonstrated. The approach consists of local oxidation of a silicon-oninsulator chip covered with a e-beam patterned hydrogen silsesquioxane mask. A single oxidation step converts hydrogen silsesquioxane to a glasslike compound and simultaneously defines the waveguides, bypassing the need for any wet or dry etching steps. The spectral response of ringdoi:10.1364/oe.19.018827 pmid:21996825 fatcat:wkcfzdvvmnc5fff32jmkrixi4i