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Proceedings of the 2015 International Conference on Electromechanical Control Technology and Transportation
Metal-assisted chemical etching (MaCE) of silicon (Si) is a well-used method for the fabrication of Si nanostructures. To simplify the control etching for the fabrication of Si 3D nanostructures, we developed a new method using direct electric field to control the etching direction. We examined the MaCE process in the electric field, and evaluated the effect of different electric field frequencies on the production of Si nanostructures. The results demonstrate that electric fields candoi:10.2991/icectt-15.2015.20 fatcat:sowiwloaebh2xhdxvobl4q3mri