Metal-Assisted Chemical Etching of Silicon 3D Nanostructure Using Direct Electric Field

Xiaodong Jiao, Yan Chao, Liqun Wu, Anqi Yao
2015 Proceedings of the 2015 International Conference on Electromechanical Control Technology and Transportation   unpublished
Metal-assisted chemical etching (MaCE) of silicon (Si) is a well-used method for the fabrication of Si nanostructures. To simplify the control etching for the fabrication of Si 3D nanostructures, we developed a new method using direct electric field to control the etching direction. We examined the MaCE process in the electric field, and evaluated the effect of different electric field frequencies on the production of Si nanostructures. The results demonstrate that electric fields can
more » ... y control etching direction and can be used to fabricate Si 3D nanostructures. Optimization of the electric current density and electric field frequency range has been performed.
doi:10.2991/icectt-15.2015.20 fatcat:sowiwloaebh2xhdxvobl4q3mri