Unnes Physics Journal ANALISIS STRUKTUR DAN SIFAT OPTIK FILM TIPIS GALIUM OKSIDA DOPING SENG OKSIDA YANG DIDEPOSISIKAN MENGGUNAKAN METODE DC MAGNETRON SPUTTERING

Agus Wibowo, Putut Marwoto, Sulhadi Fisika, Fakultas Matematika, Dan Ilmu, Pengetahuan Alam
2013 unpublished
Abstrak ___________________________________________________________________ Film tipis Galium Okside doping Seng Oksida (Ga2O3:Zn) telah berhasil dideposisi di atas substrat silicon (1 1 1) dan corning glass pada daya plasma 22.16 W dengan suhu substrat 600°C dan 635°C menggunakan metode dc magnetron sputtering. Struktur kristal film dikarakterisasi menggunakan XRD (X-ray Diffraction). Morfologi film dikarakterisasi menggunakan SEM (Scanning Electron Microscopic). Transmitansi optik
more » ... i optik dikarakterisasi dengan spektrometer UV-Vis. Film tipis Ga2O3:Zn pada suhu temperatur 600°C dan 635°C mempunyai struktur polikristal. Telah didapat peak Ga2O3 (0 1 2) dan (2 1 10) dan peak silicon (1 1 1) dan (4 4 4). Pada orientasi (0 1 2) memiliki intensitas tertinggi dan nilai full width half maximum (FWHM) terkecil pada suhu substrat 600°C. Nilai transmitansi semakin kecil pada peningkatan suhu substrat dengan nilai terbesar 70% yang dimiliki suhu substrat 600°C dan 60% untuk suhu 635°C, dengan besarnya energi gap yang dihasilkan relative sama yaitu 4,65eV dan 4,60eV. Abstract ___________________________________________________________________ Zinc Oxide doped Gallium Oxide (Ga2O3:Zn) thin films have been successfully deposited at corning glass and silicon (1 1 1) substrat with a plasma power 20.16 W with substrat temperature 600°C dan 635°C using dc magnetron sputtering method. The crystal structure of films were characterized using XRD (X-ray diffraction). Morphology films ware characterized using SEM (Scanning Electron Microscopic). Optical transmittance characterized by UV-vis spectrometer. Ga2O3:Zn thin films on a substrat temperature of 600°C dan 635°C have a polycrystalline structure. Have obtained Ga2O3 peak (0 1 2) and (2 1 10) and peak silicon (1 1 1) and (4 4 4). The orientation (0 1 2) has the highest intensity and the value of full width half maximum (FWHM) at the smallest substrat temperature 600°C. Transmittance value the smaller the increase in substrate temperature with the largest value of 70% is owned by the substrate temperature of 600 ° C and 60% for a temperature of 635 ° C, with the magnitude of the resulting energy gap is relatively the same, namely 4.60 eV and 4.65 eV.
fatcat:u5sx256xqzaztbtg47rbrwexbi