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A low switching voltage organic-on-inorganic heterojunction memory element utilizing a conductive polymer fuse on a doped silicon substrate
Applied Physics Letters
We present a simple, nonvolatile, write-once-read-many-times ͑WORM͒ memory device utilizing an organic-on-inorganic heterojunction ͑OI-HJ͒ diode with a conductive polymer fuse consisting of polyethylene dioxythiophene:polysterene sulfonic acid ͑PEDOT:PSS͒ forming one side of the rectifying junction. Current transients are used to change the fuse from a conducting to a nonconducting state to record a logical "1" or "0", while the nonlinearity of the OI-HJ allows for passive matrix memorydoi:10.1063/1.1763632 fatcat:3ijpvgzenfaileqiesq4lmto6a