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Using extraordinarily low pressure ͑0.1-1 Torr͒ we obtained high-density nucleation of diamond on mirrorpolished silicon in a hot-filament chemical vapor deposition ͑HF-CVD͒ system. A diamond nuclei density as high as 10 10 -10 11 cm Ϫ2 was achieved, which was comparable to the largest nuclei density obtained in a microwave-plasma chemical vapor deposition system. The low-pressure nucleation technique and the pressure effect on diamond nucleation were discussed in detail based on moleculardoi:10.1103/physrevb.55.15937 fatcat:yii5k4ow4rbwrm34gc42w5uyge