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Physics and Performance of Phase Change Memories
2005
2005 International Conference On Simulation of Semiconductor Processes and Devices
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Phase change memories (PCM) are considered promising candidates for the replacement of non-volatile Flash technology at the nanoscale. The paper reviews the physics of PCM operation, the scaling potentials of these devices, some options recently proposed for the cell structure, the main challenges for the PCM to become fully competitive with standard Flash technology.
doi:10.1109/sispad.2005.201524
fatcat:hkvuu7fmqbesbji6r2fssedjua