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A temperature characterization of (Si-FinFET) based on channel oxide thickness
2019
TELKOMNIKA (Telecommunication Computing Electronics and Control)
This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness-based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current-voltage characteristics with different temperatures and gate oxide thickness values (Tox=1, 2, 3, 4, and 5 nm) are initially
doi:10.12928/telkomnika.v17i5.11798
fatcat:bmaaoh5epjahfncydkovkqxvoy