A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is
Electron spin resonance investigation of electronic states in hydrogenated microcrystalline silicon
Physical Review B (Condensed Matter)
Phosphorus-doped microcrystalline silicon with high-crystalline volume fraction was prepared by very highfrequency plasma enhanced chemical vapor deposition. The material is studied by electron spin resonance and transport measurements as a function of doping and temperature. In all samples a resonance at gϭ1.998 is found with spin densities very similar to the phosphorus dopant density and also the carrier density at high doping levels. This resonance is related to doping-induced excessdoi:10.1103/physrevb.60.11666 fatcat:i4xszbk2ezccve6cmtxftpza5e