Oxide roughness effect on tunneling current of MOS diodes

B.-C. Hsu, K.-F. Chen, C.-C. Lai, S.W. Lee, C.W. Liu
2002 IEEE Transactions on Electron Devices  
Two-dimensional (2-D) device simulation is used to investigate the tunneling current of metal ultra-thin-oxide silicon tunneling diodes with different oxide roughness. With the conformal nature of ultrathin oxide, the tunneling current density is simulated in both direct tunneling and Fowler-Nordheim (FN) tunneling regimes with different oxide roughness. The results show that oxide roughness dramatically enhances the tunneling current density and the 2-D electrical effect is responsible for
more » ... increment of tunneling current density. Furthermore, a set of devices with controlled oxide roughness is fabricated to verify the simulation results and our model qualitatively agrees with the experiment results.
doi:10.1109/ted.2002.805229 fatcat:irejmxnatzcnjenizzkpyz67ta