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Interfacial bonding geometry and electronic structures of In 2 O on InAs and In 0.53 Ga 0.47 As͑001͒-͑4 ϫ 2͒ have been investigated by scanning tunneling microscopy/scanning tunneling spectroscopy ͑STM/STS͒. STM images show that the In 2 O forms an ordered monolayer on both InAs and InGaAs surfaces. In 2 O deposition on the InAs͑001͒-͑4 ϫ 2͒ surface does not displace any surface atoms during both room temperature deposition and postdeposition annealing. Oxygen atoms from In 2 O molecules bonddoi:10.1063/1.3497040 pmid:21033816 fatcat:pfuzzj7tr5asrjlazhzbfj3xge