Infrared backwards laser melting of a silicon wafer
European Physical Journal : Applied physics
We investigate a method for melting a silicon wafer's rear side with a pulsed infrared laser (1064 nm) impinging onto the front side. The targeted application for this method is deep laser doping. Our numerical model simulates the evolution of the two-dimensional temperature distribution in the wafer caused by pulsed infrared laser irradiation. The model incorporates the temperature dependent material properties of silicon and the enthalpy-based phase change by means of finite volumes. The
... e volumes. The simulation yields spacial temperature distributions of the wafer's cross section at defined time steps. We obtain the laser parameters for a continuous melt depth of 40 μm in a 200 μm thick wafer from the analysis of the simulation results. Open Access This article is distributed under the terms of the Creative Commons Attribution License http:// creativecommons.org/licenses/by/4.0 which permits unrestricted use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.