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A 4μs integration time imager based on CMOS single photon avalanche diode technology
2006
Sensors and Actuators A-Physical
An optical imager is reported based on single photon avalanche diodes. The imager, fabricated in 0.8 m CMOS technology, consists of an array of 1024 pixels each with an area of 58 m × 58 m for a total chip area of 2.5 mm × 2.8 mm. The architecture of the imager is reduced to a minimum since no A/D converter is required. Moreover, since the output of each pixel is digital, complex read-out circuitry, amplifiers, sample and hold, and other analog processing circuits are also not necessary. The
doi:10.1016/j.sna.2006.02.031
fatcat:x53aaszuxbg7zjk7asloor5i34