A 4μs integration time imager based on CMOS single photon avalanche diode technology

Cristiano Niclass, Alexis Rochas, Pierre-André Besse, Radivoje Popovic, Edoardo Charbon
2006 Sensors and Actuators A-Physical  
An optical imager is reported based on single photon avalanche diodes. The imager, fabricated in 0.8 m CMOS technology, consists of an array of 1024 pixels each with an area of 58 m × 58 m for a total chip area of 2.5 mm × 2.8 mm. The architecture of the imager is reduced to a minimum since no A/D converter is required. Moreover, since the output of each pixel is digital, complex read-out circuitry, amplifiers, sample and hold, and other analog processing circuits are also not necessary. The
more » ... imum measured dynamic range is 120 dB and the minimum noise equivalent intensity is 1.3 mlx. The minimum integration time per pixel is 4 s while optical and electrical crosstalk are negligible without the need for any post-processing or other non-standard techniques.
doi:10.1016/j.sna.2006.02.031 fatcat:x53aaszuxbg7zjk7asloor5i34